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3C-SiC layers epitaxially grown on 6H-SiC substrates have been characterized by forming Ni Schottky contacts by scanning internal photoemission microscopy (SIPM). SIPM measurements with a green laser clearly imaged domain patterns consisting of 3C-and 6H-SiC. SIPM with a red laser also revealed that boundaries of the 3C/6H and 3C/3C domains have a lower Schottky barrier. These results are consistent with the current-voltage characteristics. We found that this method is a powerful tool for investigating the inhomogeneity of both crystal quality and electrical characteristics.

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