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The Auger recombination coefficient has been determined from the decay kinetics of highly excited silicon. It was found to be proportional to T0.6, increasing from 3.0×10−31 to 4.6×10−31 cm6s−1 in the temperature interval 195–372 K.

Approximate expressions are presented which are useful for computing the position of the Fermi level in a semiconductor when the carrier concentration is known. A simple approximation formula is applicable for η=EF/kT⩽5.7, while an extended approximation can be used up to η⩽20, the error in EF being less than 10−2kT in both cases.

The diffusivity-mobility ratio of electrons o r holes in semiconductors is usually expressed by the Einstein relation D/JJ = liT/e. Following Spenke (l), Lindholm and Ayers (2) have discussed the diffusivity-mobility ratio for degenerate semiconduc -