No abstract

The Auger recombination coefficient has been determined from the decay kinetics of highly excited silicon. It was found to be proportional to T0.6, increasing from 3.0×10−31 to 4.6×10−31 cm6s−1 in the temperature interval 195–372 K.

No abstract

No abstract

Describes and experimental method together with an analysis of the experimental data, which makes it possible to determine the interband absorption coefficient, the free carrier absorption cross-section and the surface reflectivity in the same experimental set-up. The experiments were performed on samples of pure silicon at T=294K using a pulsed Nd-YAG laser, which gave pulses of 10-15 ns duration at lambda =1.06 mu m. The maximum carrier concentration achieved was about 3*1019 cm-3. Effects of laser beam inhomogeneities are also discussed and included in the absorption model.