Recombination in strongly excited silicon

Svantesson, Kjell; Nilsson, N.G.; Huldt, L.

doi:10.1016/0038-1098(71)90120-7

Cited by 53 publications

(16 citation statements)

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“…at high carrier concentration. Measurements of the decay of the recombination radiation from silicon after strong photoexcitation [4] gave results which could only be explained in terms of a third-order recombination process. Free carrier absorption measurements in silicon by Woerdman [5] gave results which also indicated a third-order process.…”

Section: Introductionmentioning

confidence: 99%

“…Measurements of the spectral distribution of the recombination radiation from silicon [IO] showed that the values of the carrier concentrations which were previously obtained [4] were too high. The spectral distribution offered an independent determination of the carrier concentration, which is an important parameter in the determination of the recombination coefficient.…”

Section: Introductionmentioning

confidence: 99%

“…The purpose of the present paper is to present the theoretical model for the recombination kinetics and the spectral distribution, which has been used in the interpretation of the results of the experiments in refs. [4,9,IO]. The csrriers were injected by Phj.sico Scripto 8 single pulses from a Q-switched ruby laser (photon energy hvL = 1.8 eV).…”

Section: Introductionmentioning

confidence: 99%

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Band-to-band Auger Recombination in Silicon and Germanium

Nilsson¹

1973

Phys. Scr.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Band-to-band Auger Recombination in Silicon and Germanium

Nilsson¹

1973

Phys. Scr.

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“…Like in conventional semiconductors, strong optical excitation results in a population-inverted state [15][16][17][18][19][20]. On the other hand, photo-generated electron-hole pairs in a conventional semiconductor typically relax by Auger recombination [21][22][23][24], a process that is strongly suppressed in photo-excited graphene due to the abence of occupied states at the bottom of the conduction band. Hence, in contrast to conventional semiconductors, primary thermalization events in graphene are dominated by impact ionization [25][26][27][28], where the excess energy of the photo-excited electron is used to generate additional electron-hole pairs.…”

Section: Introductionmentioning

confidence: 99%

Probing carrier dynamics in photo-excited graphene with time-resolved ARPES

Gierz

2017

Journal of Electron Spectroscopy and Related Phenomena

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The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for many optoelectronic applications, ranging from light harvesting to optical amplification. Here we measure the formation and relaxation of the photo-generated non-thermal carrier distribution in monolayer graphene with time-and angleresolved photoemission spectroscopy. Using sub 10fs pulses we identify impact ionization as the primary scattering channel, which dominates the dynamics for the first 25fs after photo-excitation.Auger recombination is found to set in once the carriers have accumulated at the Dirac point with time scales between 100 and 250fs, depending on the number of non-thermal carriers. Our observations help in gauging graphene's potential as a solar cell and TeraHertz lasing material.

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“…2a). This process (Auger recombination) is dominant in conventional semiconductors with a parabolic dispersion [25][26][27][28]. In graphene, due to the conical dispersion and the absence of a band gap, this process is strongly suppressed by the lack of occupied (empty) states at the bottom (top) of the conduction (valence) band.…”

Section: Extreme Timescalesmentioning

confidence: 99%

Electronic-structural dynamics in graphene

Gierz

Cavalleri

2016

Structural Dynamics

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We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared (ℏωpump=950 meV), we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optical amplifiers. At lower pump photon energies (ℏωpump<400 meV), for which interband absorption is not possible in doped samples, we find evidence for free carrier absorption. In addition, when mid-infrared pulses are made resonant with an infrared-active in-plane phonon of bilayer graphene (ℏωpump=200 meV), a transient enhancement of the electron-phonon coupling constant is observed, providing interesting perspective for experiments that report light-enhanced superconductivity in doped fullerites in which a similar lattice mode was excited. All the studies reviewed here have important implications for applications of graphene in optoelectronic devices and for the dynamical engineering of electronic properties with light.

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Recombination in strongly excited silicon

Cited by 53 publications

References 2 publications

Band-to-band Auger Recombination in Silicon and Germanium

Band-to-band Auger Recombination in Silicon and Germanium

Probing carrier dynamics in photo-excited graphene with time-resolved ARPES

Electronic-structural dynamics in graphene

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