The temperature dependence of the Auger recombination coefficient of undoped silicon

Svantesson, Kjell; Nilsson, N.G.

doi:10.1088/0022-3719/12/23/019

Cited by 60 publications

(20 citation statements)

References 22 publications

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“…18,25,26 The Auger recombination coefficient determined from the low repetition rate data agrees well with the previously reported range of data; the slightly high value could be due to the surface treatments on the Si wafers. 18,25,26 The Auger recombination coefficient determined from the low repetition rate data agrees well with the previously reported range of data; the slightly high value could be due to the surface treatments on the Si wafers.…”

Section: Excited Number Density and Pulse Accumulation Effectssupporting

confidence: 90%

Excitation rate dependence of Auger recombination in silicon

Hopkins

Barnat

Cruz‐Campa

et al. 2010

Journal of Applied Physics

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This work reports on measurements of the Auger recombination coefficients in silicon wafers with pump-probe thermoreflectance techniques operating at two different excitation rates: 250 kHz ͑low repetition rate͒ and 80 MHz ͑high repetition rate͒. The different excitation frequencies give rise to different thermoreflectance signals in the Si samples, which is ascribed to the excited number density in the conduction band. In the low repetition rate case, the excited carriers recombine via Auger processes before the next pump excitation is absorbed. However, in the high repetition rate case, the rate in which the pump excitations are absorbed at the sample surface is higher than the Auger recombination rate, indicating that the excited carrier densities in the high repetition rate experiments are much higher than in the low repetition rate measurements even though the pump fluences are comparable. This is ascribed to pulse accumulation in the high repetition rate measurements, and is quantified with rate equation and thermoreflectance models fit to the experimental data. Comparing the data taken at the two different excitation modulations gives insight into the excited carrier density when recombination rate are on the same order as excitation frequencies.

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Section: Excited Number Density and Pulse Accumulation Effectssupporting

confidence: 90%

Excitation rate dependence of Auger recombination in silicon

Hopkins

Barnat

Cruz‐Campa

et al. 2010

Journal of Applied Physics

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“…34 In indirect semiconductors, since the process is phonon mediated, annihilation has a strong temperature dependence. 32 For ZnO, the high density plasma decay in Fig. 6͑b͒ is essentially independent of lattice temperature.…”

Section: B Plasma Formation At High Densitymentioning

confidence: 87%

Exciton and electron-hole plasma formation dynamics in ZnO

2007

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We employ optical pump-THz probe measurements to study the formation of excitons and electron-hole plasmas following photogeneration of a hot electron-hole gas in the direct gap semiconductor zinc oxide. Below the Mott density, we directly observe the evolution of the hot electron-hole plasma into an insulating exciton gas in the 10 to 100 ps following photoexcitation. The temperature dependence of this process reveals that the rate determining step for exciton formation involves acoustic phonon emission. Above the Mott density, the density of the hot electron-hole plasma initially decreases very rapidly ͑ϳ1.5 ps͒ through Auger annihilation until a stable plasma is formed close to the Mott density. In contrast to exciton formation, Auger annihilation is found to be independent of lattice temperature, occurring while the plasma is still hot.

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“…Since the Auger lifetime is inversely quadratic with injection level [37], a significant portion of the losses reported here may be ascribed to Auger recombination. The increasing Auger recombination coefficient at higher temperatures [38] also results in a higher loss. According to Svantesson et al the Auger coefficient increases from around cm s at 294 K to cm s at 372 K (similar to the range considered here).…”

Section: Discussionmentioning

confidence: 99%

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Laird

Yuan

et al. 2009

IEEE Trans. Nucl. Sci.

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Spatially-resolved picosecond laser induced transients have been measured in a 0.18 m CMOS inverter test structure as a function of temperature. Sensitive -drain and -drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases.

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The temperature dependence of the Auger recombination coefficient of undoped silicon

Cited by 60 publications

References 22 publications

Excitation rate dependence of Auger recombination in silicon

Excitation rate dependence of Auger recombination in silicon

Exciton and electron-hole plasma formation dynamics in ZnO

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

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