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Recently, crystallized gate dielectrics have attracted considerable interest due to their high performance in dielectric properties. We investigated the growth of crystalline ZrO2 films prepared on Si (1 0 0) by the limited reaction sputtering system under different growth temperatures from 400 to 700 °C. The structural characteristics of the samples were studied by x-ray diffraction, reflection high-energy electron diffraction and atomic force microscopy, respectively, which provide a solid identification of the phase transformation from the monoclinic phase to the tetragonal phase. The dielectric properties were studied by C–V and I–V measurements on Au/ZrO2/Si (1 0 0) MIS structures, suggesting that the electrical properties are strongly influenced by the crystalline structures. Furthermore, the tetragonal ZrO2 thin film exhibits a high permittivity up to 32 as well as a negligible flatband voltage shift in C–V curves. The results indicate that the tetragonal ZrO2 dielectric appears to be a very promising high-k candidate for future ULSI devices.

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t blIP a e . rocess parameters Parameters Values Oz concentration 2% Sputtering power 80W Substrate temperature 400-700°C Working pressure 5mTorrsuppressed. In the present paper, crystalline ZrOz thin films were prepared on Si (100) substrate by the limited reaction sputtering system. The results suggest that the crystalline phases have strong influences on the CooV performance, and the oriented tetragonal zrO z shows a permittivity as high as 32. ExperimentsThe substrates, p-type Si(100) wafers with p=0.6-1.2n·cm, were cleaned through conventional RCA cleaning process, and then dipped in 1% diluted HF solution for about 30 s to leave an H-terminated surface. ZrOz thin films with thickness of 1Onm--l OOnm were deposited by the limited reaction sputtering system. The detailed process parameters are listed in Table 1. AbstractWe investigated the growth of crystalline ZrOz film prepared on p-Si( 100) by limited reaction sputtering system under different growth temperatures from 400 to 700°C. The structural characteristics of the samples were studied by XRD, RHEED and AFM, which provided a solid identification of the phase transformation from monoclinic phase to tetragonal phase. The dielectric properties were studied by CooV and I-V measurements on Au/ZrOz/pooSi(100) MIS structures, suggesting that the tetragonal ZrOz thin film shows excellent dielectric performances including a high permittivity up to 32 as well as a negligible flatband voltage shift in CooV curves.

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