Erratum to “Novel material for super high efficiency multi-junction solar cells” by Y. Ohshita, H. Suzuki, N. Kojima, T. Tanaka, T. Honda, M. Inagaki, M. Yamaguchi [J. Cryst. Growth 318 (2011) 328–331]

Ohshita, Yoshio; Suzuki, Hisao; Kojima, N.; Tanaka, Tomohiro; Honda, Takahiko; Inagaki, Michio; Yamaguchi, M.

doi:10.1016/j.jcrysgro.2013.04.029

Cited by 12 publications

(15 citation statements)

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“…After annealing for 60 s at 850 °C, a strongly p ‐type layer is obtained with a mobility 60 cm 2 V −1 s −1 for a carrier density of 1 × 10 19 cm −3 . The mobility value obtained here is about 50% lower than the mobility value reported in GaNAs with the same N concentration . However, the carrier density in GaNAs with 0.5% N is about ∼7 × 10 16 cm −3 , two orders of magnitude lower than the value measured in our samples.…”

Section: Resultscontrasting

confidence: 85%

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Kolhatkar

Boucherif

Bioud

et al. 2016

Physica Status Solidi (b)

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We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.

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Section: Resultscontrasting

confidence: 85%

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Kolhatkar

Boucherif

Bioud

et al. 2016

Physica Status Solidi (b)

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“…However, the dilute nitride alloy InGaNAs (E g = 1.0 eV) is not practical to fabricate the GaAs-based multi-junction solar cells due to the very short lifetime of its minority carriers, although it has a satisfactory lattice matching with GaAs. [8][9][10] Another alternative is to adopt In 0.3 Ga 0.7 As (E g = 1.0 eV) instead of InGaNAs as the sub-cell to achieve a photocurrent match. 5 However, In 0.3 Ga 0.7 As has a large lattice mismatch of 2.3% with GaAs.…”

Section: Introductionsmentioning

confidence: 99%

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Gao

Lei

et al. 2014

CrystEngComm

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The effects of the thickness of the large-mismatched amorphous In 0.6 Ga 0.4 As buffer layer on In 0.3 Ga 0.7 As epi-films grown on a GaAs substrate have been systematically investigated. The In 0.3 Ga 0.7 As films with the In 0.6 Ga 0.4 As buffer layer of 0, 1, 2, and 4 nm thickness are grown by low-temperature molecular beam epitaxy (LT-MBE) and are characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that the degree of relaxation and the crystallinity of the as-grown In 0.3 Ga 0.7 As films are strongly affected by the thickness of the amorphous In 0.6 Ga 0.4 As buffer layer. The thinner In 0.6 Ga 0.4 As buffer layer is not enough to efficiently release the misfit strain between the In 0.3 Ga 0.7 As epilayer and the GaAs substrate, while the thicker In 0.6 Ga 0.4 As buffer layer is unfavorable to trap the dislocations and prevent them from extending into the In 0.3 Ga 0.7 As epi-films. We have demonstrated that the amorphous In 0.6 Ga 0.4 As buffer layer with a thickness of 2 nm can advantageously prevent threading and misfit dislocations from propagating into the subsequent In 0.3 Ga 0.7 As epilayer and increase the degree of relaxation of the as-grown In 0.3 Ga 0.7 As, ultimately leading to a high-quality In 0.3 Ga 0.7 As film. Our novel buffer layer technology has triggered a simple but effective approach to grow high-crystallinity In 0.3 Ga 0.7 As epitaxial film and is favorable for fabrication of GaAs-based high-efficiency four-junction solar cells.

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“…Unintentionally doped p-GaAsN films were grown on p-doped GaAs (001) 2° off toward (110) substrate by CBE [19][20][21][22]. Triethylgallium {TEGa, (C 2 H 5 ) 3 …”

Section: Methodsmentioning

confidence: 99%

Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

Elleuch

Wang

Lee

et al. 2015

Journal of Alloys and Compounds

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Erratum to “Novel material for super high efficiency multi-junction solar cells” by Y. Ohshita, H. Suzuki, N. Kojima, T. Tanaka, T. Honda, M. Inagaki, M. Yamaguchi [J. Cryst. Growth 318 (2011) 328–331]

Cited by 12 publications

References 0 publications

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

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Erratum to “Novel material for super high efficiency multi-junction solar cells” by Y. Ohshita, H. Suzuki, N. Kojima, T. Tanaka, T. Honda, M. Inagaki, M. Yamaguchi [J. Cryst. Growth 318 (2011) 328–331]

Cited by 12 publications

References 0 publications

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy

Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

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Achieving high-quality In_0.3Ga_0.7As films on GaAs substrates by low-temperature molecular beam epitaxy