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Proper analysis of the Schottky barrier height extraction methods shows that sulfur implantation followed by anneal does not effectively reduce the Schottky barrier height of NiSi/n-Si contacts. Instead, the results for sulfur implanted samples are consistent with enhanced field emission due to an increased doping density of the surface region of the silicon. Sulfur has a large impact on contact resistivity for silicon with low initial doping concentration (<∼1017 cm−3), but little impact for silicon with high initial doping density (>∼1017 cm−3). Internal photoemission measurements show that the Schottky barrier height remains unchanged with sulfur implantation.

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