We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdSe nanoplatelets with thicknesses of 3, 4 and 5 monolayers are chosen for experimental demonstrations. The bright-dark splitting of excitons varies from 3.2 to 6.0 meV and is inversely proportional to the nanoplatelet thickness. Good agreement between experimental and theoretically calculated size dependence of the bright-dark exciton slitting is achieved. The recombination rates of the bright and dark excitons and the bright to dark relaxation rate are measured by time-resolved techniques.

The dynamics of the expansion of the first order spatial coherence g(1) for a polariton system in a high-Q GaAs microcavity was investigated on the basis of Young's double slit experiment under 3 ps pulse excitation at the conditions of polariton Bose-Einstein condensation. It was found that in the process of condensate formation the coherence expands with a constant velocity of about 10(8)  cm/s. The measured coherence is smaller than that in a thermal equilibrium system during the growth of condensate density and well exceeds it at the end of condensate decay. The onset of spatial coherence is governed by polariton relaxation while condensate amplitude and phase fluctuations are not suppressed.

The condensation of excitons into an electron–hole liquid (EHL) and the main EHL properties in bulk semiconductors and low-dimensional structures are considered. The EHL properties in bulk materials are discussed primarily in qualitative terms based on the experimental results obtained for germanium and silicon. Some of the experiments in which the main EHL thermodynamic parameters (density and binding energy) have been obtained are described and the basic factors that determine these parameters are considered. Topics covered include the effect of external perturbations (uniaxial strain and magnetic field) on EHL stability; phase diagrams for a nonequilibrium exciton-gas–EHL system; information on the size and concentration of electron–hole drops (EHDs) under various experimental conditions; the kinetics of exciton condensation and of recombination in the exciton-gas–EHD system; dynamic EHD properties and the motion of EHDs under the action of external forces; the properties of giant EHDs that form in potential wells produced by applying an inhomogeneous strain to the crystal; and effects associated with the drag of EHDs by nonequilibrium phonons (phonon wind), including the dynamics and formation of an anisotropic spatial structure of the EHD cloud. In discussing EHLs in low-dimensional structures, a number of studies are reviewed on the observation and experimental investigation of phenomena such as spatially indirect (dipolar) electron–hole and exciton (dielectric) liquids in GaAs/AlGaAs structures with double quantum wells (QWs), EHDs containing only a few electron–hole pairs (dropletons), EHLs in type-I silicon QWs, and spatially direct and dipolar EHLs in type-II silicon–germanium heterostructures.

Low-temperature (T≈2 K) photoluminescence (PL) and photoluminescence excitation (PLE) spectra of GaAs/AlGaAs (x = 0.05) structures with shallow quantum wells (QWs) were investigated. It was found that the PLE spectra exhibit a number of broad bands in the above-barrier energy region; these bands alternate `in opposite phases' in the spectra of free excitons and excitonic complexes (trions) (i.e. an increase in the exciton luminescence intensity is accompanied by a decrease in the luminescence intensity of the complexes). Effects originating from simultaneous irradiation of the sample by two laser beams of different wavelengths were studied. In the case where the photon energy of the Ti-sapphire laser is tuned to excite only the QW states, additional pumping by a He-Ne or Ar-ion laser results in the shift of the equilibrium in the exciton-trion system towards an increase in the concentration of the latter species. On the other hand, upon excitation into certain barrier states with energies both below and above the barrier bandgap, additional pump shifts the equilibrium in the opposite direction.