Articles you may be interested inDNA observation with scanning tunneling microscope using a solution

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Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometryWe have quantitatively investigated how boron segregates to regions close to the surface, and what controls this phenomenon, using x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and backside secondary ion mass spectrometry measurement techniques. We found that, contrary to the equilibrium segregation, the pileup of boron is mainly on and within 0.6 nm of the Si side of the interface, and that there is no difference between the kind of encapsulation. This also suggests that the pileup of boron is mainly on the Si side, and implies that the main factor in this segregation is the existence of the Si surface. From the viewpoint of device fabrication, this result seems to be useful in terms of the fabrication of sidewalls. The possibility of boron pileup to occurring in the interstitial state was also shown. Our results suggested a way of looking at dopant profiles by predictive computer modeling.

The advantages of fluorine introduction on fabrication of shallow p+/n-junctions have been demonstrated. This was done by implanting fluorine onto the boron implanted p+/n-junction area prior to annealing. By introducing optimized amounts of fluorine, (1) the boron redistribution after annealing is suppressed, (2) the concentration of activated boron becomes higher, and (3) the leakage current level of the p+/n-junction decreases. These behaviors may be due to interactions between fluorine and defects in the silicon substrate or at the SiO2/Si interface.

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