Advantages of Fluorine Introduction in Boron Implanted Shallow p<sup>+</sup>/n-Junction Formation

Ohyu, K.; Itoga, Toshihiko; Natsuaki, N.

doi:10.1143/jjap.29.457

Cited by 63 publications

(18 citation statements)

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“…1͑b͒ and 1͑c͒ show that the high energy F ϩ implant has not only completely eliminated TEBD, but has also given a substantial 65% reduction in the thermal diffusion of boron. Reductions in the transient enhanced diffusion of boron by fluorine have been reported previously in the literature, [5][6][7][8][9][10][11] and our results are comparable with the largest suppressions reported. 10 Suppression of boron thermal diffusion has not been reported previously, and possible explanations are discussed subsequently.…”

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confidence: 92%

“…4 Recently, there has been considerable interest in the use of fluorine to suppress transient enhanced boron diffusion ͑TEBD͒ in silicon. [5][6][7][8][9][10][11] Early work showed that reduced TEBD was obtained when BF 2 ϩ was implanted instead of B ϩ . 5 In a later work, Ohyu et al 6 implanted F ϩ separately and showed that the fluorine implant reduced TEBD and increased the boron activity.…”

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confidence: 99%

“…[5][6][7][8][9][10][11] Early work showed that reduced TEBD was obtained when BF 2 ϩ was implanted instead of B ϩ . 5 In a later work, Ohyu et al 6 implanted F ϩ separately and showed that the fluorine implant reduced TEBD and increased the boron activity. However, there have also been contradictory reports in the literature, which showed that fluorine implants had little or no effect on boron diffusion 12 and even enhanced boron diffusion in amorphous silicon.…”

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Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Mubarek

Ashburn

2003

Applied Physics Letters

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This letter investigates the effect of a deep F ϩ implant on the diffusion of boron in silicon. The effects on boron thermal diffusion and transient enhanced diffusion are separately studied by characterizing the diffusion of a buried boron marker layer in wafers with and without a 185 keV, 2.3 ϫ10 15 cm Ϫ2 F ϩ implant, and with and without a 288 keV, 6 ϫ10 13 cm Ϫ2 P ϩ implant. In samples given both P ϩ and F ϩ implants, the fluorine completely eliminates the transient, enhanced boron diffusion caused by the P ϩ implant, and in samples implanted with F ϩ only, the fluorine suppresses the boron thermal diffusion by 65%. These results are explained by the effect of the fluorine on the vacancy concentration in the vicinity of the boron profile.

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Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Mubarek

Ashburn

2003

Applied Physics Letters

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“…This interest has been motivated by the effect of fluorine in totally suppressing boron transient enhanced diffusion [1][2][3][4][5][6][7][8][9] ͑TED͒ and also in reducing boron thermal diffusion 7,8 in silicon. When applied to complementary MOS technology, fluorine implantation has been shown to improve the threshold voltage roll-off in p-channel transistors 10 and has been used to produce a supersharp halo profile in n-channel transistors.…”

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confidence: 99%

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Kham

Maťko

Chenevier

et al. 2007

Journal of Applied Physics

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Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3ϫ 10 15 cm −2 F + implant is made into silicon samples containing multiple boron marker layers and rapid thermal annealing is performed at 1000°C for times of 15-120 s. The boron and fluorine profiles are characterized by secondary ion mass spectroscopy and the defect structures by transmission electron microscopy ͑TEM͒. Fluorine implanted samples surprisingly show less boron diffusion under interstitial injection than those under inert anneal. This effect is particularly noticeable for boron marker layers located in the interstitial-rich region of the fluorine damage profile and for short anneal times ͑15 s͒. TEM images show a band of dislocation loops around the range of the fluorine implant and the density of dislocation loops is lower under interstitial injection than under inert anneal. It is proposed that interstitial injection accelerates the evolution of interstitial defects into dislocation loops, thereby giving transient enhanced boron diffusion over a shorter period of time. The effect of the fluorine implant on boron diffusion is found to be the opposite for boron marker layers in the interstitial-rich and vacancy-rich regions of the fluorine damage profile. For marker layers in the interstitial-rich region of the fluorine damage profile, the boron diffusion coefficient decreases with anneal time, as is typically seen for transient enhanced diffusion. The boron diffusion under interstitial injection is enhanced by the fluorine implant at short anneal times but suppressed at longer anneal times. It is proposed that this behavior is due to trapping of interstitials at the dislocation loops introduced by the fluorine implant. For boron marker layers in the vacancy-rich region of the fluorine damage profile, suppression of boron diffusion is seen for short anneals and then increased diffusion after a critical time, which is longer for inert anneal than interstitial injection. This behavior is explained by the annealing of vacancy-fluorine clusters, which anneal quicker under interstitial injection because the injected interstitials annihilate vacancies in the clusters.

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“…The presence of fluorine has been shown to have an added advantage as it increases the activation of the boron after rapid thermal annealing [2,3]. Co-implants of boron and fluorine have also been shown to reduce the transient-enhanced diffusion of boron during post-implantation annealing [3][4][5]. Fluorine, however, can penetrate the gate oxide resulting in device degradation [6].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of BBr2+ and B++Br+ implants in silicon

Sharp

Gwilliam

Sealy

et al. 2005

Materials Science and Engineering: B

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Advantages of Fluorine Introduction in Boron Implanted Shallow p⁺/n-Junction Formation

Cited by 63 publications

References 8 publications

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Evaluation of BBr2+ and B++Br+ implants in silicon

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Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation

Cited by 63 publications

References 8 publications

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Reduction of boron thermal diffusion in silicon by high energy fluorine implantation

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

Evaluation of BBr2+ and B++Br+ implants in silicon

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Product

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Advantages of Fluorine Introduction in Boron Implanted Shallow p⁺/n-Junction Formation