Conduction and low-frequency noise are analyzed in hydrogenated amorphous thin film transistors with small channel length. From current–voltage characteristics a set of conduction parameters is extracted pointing out parasitic resistances in series with the active channel. The low-frequency noise behavior is studied by means of the small equivalent circuit of the device. Intrinsic channel noise is separated from access resistance noise. Channel noise variations versus device biases agree with Hooge’s theory (carrier mobility fluctuations) but the noise levels are greater than in crystalline metal-oxide-semiconductor transistors. For high drain current 1/f noise in access series resistances prevails and becomes the main noise source. So, the results show the important part taken by these resistances in conduction and noise. Some comments for the design of thin film transistors are given.

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In this paper we shall review the basis for the design of integrated circuits with amorphous silicon TFTs on glass, first by the analysis of the TFT reliability then by the use of the reliability data to optimise the circuits design.

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Abstract— An active matrix LCD with integrated drivers was developed using a standard amorphous silicon TFT technology. Despite the low mobility, the high threshold voltage and high parasitic capacitance of this technology compared to polysilicon technologies, we have built an high performance light valve for projection application. We shall discuss the topology and the main features of the integrated row and column drivers and the matrix.