AMLCD with integrated drivers made with amorphous‐silicon TFTs

Lebrun, H.; Maurice, F.; Magariño, J.; Szydlo, N.

doi:10.1889/1.1984963

Cited by 17 publications

(22 citation statements)

References 1 publication

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“…Hydrogenated amorphous silicon (a‐Si:H) is widely used in active‐matrix liquid‐crystal displays (LCDs) and peripheral driver circuits because it has high uniformity and low cost of the fabrication. Recently, the integration of gate drivers with the a‐Si:H TFTs on glass substrates provides many advantages, including improvement on compactness and reliability, reduction in the cost by eliminating external driver integrated circuits (ICs) and related bonding connections, and simplification of data driver configuration …”

Section: Introductionmentioning

confidence: 99%

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

2018

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A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and −40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.

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Section: Introductionmentioning

confidence: 99%

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

2018

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“…Displays for portable electronic devices require high resolution, light‐weight, and low power consumption. Therefore, the integrated gate driver using amorphous silicon (a‐Si) technology for the thin‐film‐transistor liquid‐crystal display (TFT‐LCD) has become the main stream because of the mature manufacturing, low‐cost processing, and elimination of the gate driver ICs . Nevertheless, design of the integrated gate driver by a‐Si encounters three main challenges, which are the low field‐effect mobility, low reliability issue under high voltage stress, and the lack of P‐type transistor.…”

Section: Introductionmentioning

confidence: 99%

Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

Zheng

Liu

2016

J Soc Info Display

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A new gate driver has been designed and fabricated by amorphous silicon technology. With utilizing the concept of sharing the noise free block in a single stage for gate driver, dual‐outputs signals could be generated in sequence. By increasing the number of output circuit block in proposed gate driver, number of outputs per stage could also be adding that improves the efficiency for area reduction. Besides, using single driving thin‐film‐transistor (TFT) for charging and discharging, the area of circuit is also decreased by diminishing the size of pulling down TFT. Moreover, the proposed gate driver has been successfully demonstrated in a 5.5‐inch Full HD (1080xRGBx1920) TFT‐liquid‐crystal display panel and passed reliability tests of the supporting foundry.

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“…So far, a-Si integrated gate driver was originated from Thomson's shifter register which was made up of four transistors and one capacitor merely [2], [3], and many methods have been developed to improve the circuit [5]- [8]. For the prior arts, the circuit style of diode connection degrades the output rise time due to the threshold voltage drop on gate voltage of pull-up transistor, hence the before work [18] proposed a high rising time gate driver with a threshold voltage drop cancellation technique that decreases output rise time by 24.6% for high resolution display application.…”

Section: Introductionmentioning

confidence: 99%

Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application

Zheng

Liu

et al. 2013

J. Display Technol.

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A new gate driver has been designed and fabricated by amorphous silicon (a-Si) technology. With utilizing four clock signals in the design of gate driver on array (GOA), the pull-up transistor has ability for both output charging and discharging, and layout size of the proposed gate driver can be narrowed for bezel panel application. Moreover, lower duty cycle of clock signals can decrease static power loss to further reduce the overall power consumption of the proposed gate driver. The scan direction of the proposed gate driver can be adjusted by switching two direct control signals to present the reversal display of image. The proposed gate driver has been successfully demonstrated in a 4.5-inch WVGA 480 800 TFT-LCD panel and passed reliability tests of the supporting foundry.Index Terms-Amorphous silicon (a-Si), gate driver, thin-film transistor liquid crystal display (TFT-LCD).

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AMLCD with integrated drivers made with amorphous‐silicon TFTs

Cited by 17 publications

References 1 publication

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application

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