The statistical approach based on Kolmogorov's theory of metal solidification is used as the basis for a prediction of data retention time in phase change memory devices as a function of temperature of an active medium. We compared the results of theoretical simulation with the experimental results of isothermal annealing of Ge2Sb2Te5 thin films with various time and temperature regimes, and good agreement between the theoretical and experimental results was found.

A mathematical model of the crystallization process in a thin film is presented with the purpose to overcome the limitations of Kolmogorov-Johnson-Mehl-Avrami theory regarding finite-size systems. Two ways of nucleation are taken into account: at the film boundaries and in the bulk. The solution is obtained in terms of crystallization probability, which is the probability of a point inside the film to be included in the crystal at a given moment of time. It is shown that the characteristic feature of crystallization in finite-size systems is a non-uniform distribution of crystalline fraction.

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The influence of deep level defects (DLs) on the conversion efficiency of multicrystalline Si-based standard solar cells (SCs) is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. Three types of SCs with conversion efficiency 10%, 16.8% and 20.4% were studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). The correlation between the total concentration of DLs and the values of the SCs conversion efficiency is found.

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