The electronic transport properties of chalcogenide glasses of the type Ge-Se and Ge-Te to which foreign elements such as Bi, As, Cu and In are added, were investigated. Glasses of the (GeSe3.5)100-xBix system show a transition from p to n-type conduction at x ≈ 7 at. % Bi as evidenced by thermo-power measurements. The sign of the Hall coefficient is negative. This feature reveals the possibility of altering the density of charged dangling bonds by the incorporation of foreign additives. The conductivity of GeTe6 glasses is little affected by the addition of As, Cu and In. The thermopower is positive

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A new method for the analysis of self organization processes in solid state materials by calculating the information-correlation characteristics of a surface (in particular, by calculating the average mutual information) is described. Criteria for determining the degree of ordering of a surface structure are suggested; these criteria have been tested for experimental semiconductor structures of single , poly crystalline, and amorphous silicon. The dependences of the information characteristics for films of disordered semiconduc tors on the technological conditions of their fabrication are established.

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