A new method for the analysis of self organization processes in solid state materials by calculating the information-correlation characteristics of a surface (in particular, by calculating the average mutual information) is described. Criteria for determining the degree of ordering of a surface structure are suggested; these criteria have been tested for experimental semiconductor structures of single , poly crystalline, and amorphous silicon. The dependences of the information characteristics for films of disordered semiconduc tors on the technological conditions of their fabrication are established.