No abstract

A new method for the analysis of self organization processes in solid state materials by calculating the information-correlation characteristics of a surface (in particular, by calculating the average mutual information) is described. Criteria for determining the degree of ordering of a surface structure are suggested; these criteria have been tested for experimental semiconductor structures of single , poly crystalline, and amorphous silicon. The dependences of the information characteristics for films of disordered semiconduc tors on the technological conditions of their fabrication are established.

No abstract

No abstract

No abstract