Floating gate transistor is the basic building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. As silicon based integrated circuit technologies are approaching the limits of scaling, carbon based nanoelectronic devices are emerging as the future platform for low power, low cost, high performance and environment friendly circuits and systems. In this paper, a new concept of carbon nanostructure based floating gate transistor is presented. We have demonstrated a design using multilayer graphene nanoribbon (MLGNR) as the channel material and carbon nanotube (CNT) as the floating gate in the floating gate transistor. We have performed analysis of the charge accumulation mechanism in the floating gate and its dependence on the applied terminal voltages. We have observed that the proposed floating gate transistor can be operated at a much lower voltage compared to the conventional silicon based floating gate devices.

Abstract-Floating gate transistor is the basic building block of nonvolatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to introduce a new generation of memory devices using graphene nanotechnology. In this paper we present a new floating gate transistor (FGT) design based on multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT). In the proposed FGT a multilayer structure of graphene nanoribbon (GNR) would be used as the channel of the field effect transistor (FET) and a layer of CNTs would be used as the floating gate. We have performed an analysis of the charge accumulation mechanism in the floating gate and its dependence on the applied terminal voltages. Based on our analysis we have observed that proposed graphene based floating gate transistor could be operated at a reduced voltage compared to conventional silicon based floating gate devices. We have presented detail analysis of the operation and the programming and erasing processes of the proposed FGT, dependency of the programming and erasing current density on different parameters, impact of scaling the thicknesses of the control and tunneling oxides. These analysis are done based on the capacitance model of the device

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Abstract-Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based floating gate transistor design for future nanoscale flash memory technology. In this paper, we analyze the tunneling current mechanism in the proposed graphene-CNT floating gate transistor. We anticipate that the proposed floating gate transistor would adopt Fowler-Nordheim (FN) tunneling during its programming and erase operations. In this paper, we have investigated the mechanism of tunneling current and the factors that would influence this current and the behavior of the proposed floating gate transistor. The analysis reveals that FN tunneling is a strong function of the high field induced by the control gate, and the thicknesses of the control oxide and the tunnel oxide.

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