Multilayer layer graphene nanoribbon flash memory: Analysis of programming and erasing operation

Abstract

Abstract-Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based floating gate transistor design for future nanoscale flash memory technology. In this paper, we analyze the tunneling current mechanism in the proposed graphene-CNT floating gate transistor. We anticipate that the proposed floating gate transistor would adopt Fowler-Nordheim (FN) tunneling during its programming and erase operations. In this paper, we have investigated the mechanism of tunneling current and the factors that would influence this current and the behavior of the proposed floating gate transistor. The analysis reveals that FN tunneling is a strong function of the high field induced by the control gate, and the thicknesses of the control oxide and the tunnel oxide.

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

“…The proposed three-terminal NVM device memory operation is illustrated in the form of a band diagram, shown in Figure 4 b,c, in case of programming and erasing states, respectively. When the control gate voltage (V gs ) is swept from the negative voltage to the positive voltage, electrons can tunnel through the tunneling layer of Al 2 O 3 (20 nm) as per the Fowler-Nordheim tunneling effect [ 7 , 42 , 43 ]. This way, the charge stored in the floating gate layer will shift the threshold voltage (V th ) and result in a programming state ( Figure 4 b).…”