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Recently, one of the interesting topics in low dimensional condensed matter physics is p-n junctions. One of the applications of p-n junction is diode where this diode supply characteristics are applicable in both rectifiers and switching circuits. The discovery of p-n junction devices can ease the device design and investigation of physical events. Here we have reported the current in a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Graphene is one of the most suitable materials for bipolar nanoelectronics. The type of carriers and the density of electric field of graphene is controllable because of its very special band structure.

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