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Characteristics of an 8-in.-diam magnetron-sputter-type negative-ion source (MSNIS) were investigated. A negative sputtered ion beam is generated by a cesium-induced sputter type secondary negative-ion beam emission process. The plasma properties were obtained using a cylindrical Langmuir probe method. The measured electron temperature was approximately 2–5 eV, while the plasma density and plasma potential were of the order of 1011–1012 cm−3 and 5–20 V, respectively, depending on the pressure and power. A retarding field analyzer with four biasable grids measured the energy distributions of sputtered Mo− beams. The transparency of the analyzer was 22.4%. The negative-ion energy is defined by the potential of sputter cathode. The process pressure was found to have a negligible effect on ion-beam energy, but did affect the ion-beam energy spread. At low pressures (approximately 4×10−4 Torr), the energy spread was 2% of the beam energy, while an average energy spread of less than 5% of beam energy was measured at 10−3 Torr. The result shows that a well-defined negative metal ion beam can be effectively produced on a large scale.

A study for the bias control of indium-tin-oxide films synthesized by cesium assisted radio frequency magnetron sputtering J. Vac. Sci. Technol. A 21, 1069 (2003 10.1116/1.1584038 Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering An ionized physical vapor deposition, negative sputter ion beam ͑NSIB͒ technology, is described for the deposition of super-smooth indium-tin oxide ͑ITO͒ thin films with highly transparent and conductive properties at near-room temperature deposition. A negatively charged sputter ion beam is produced by retrofitting an ITO magnetron sputtering cathode with a cesium vapor injector capable of releasing controlled amounts of cesium vapor into the plasma during deposition. Using this highly energetic deposition process, ITO thin films have been obtained at near-room temperature ͑less than 50°C͒ with super-smooth surface ͑Ͻ1 nm rms͒, resistivity of 4ϫ10 Ϫ4 ⍀ cm, and transmittance higher than 85% ͑at wavelength 550 nm͒ on polycarbonate substrates.