Si/Ni-silicide Schottky junctions with atomically flat and thermodynamically stable interfaces have been achieved by using NiSi 2 source. The flat interfaces have been obtained from forming thin epitaxial NiSi 2 layer without Si substrate consumption on the interfaces. A robust φ Βn of ~0.66 eV and ideally stable n-factor of ~1.00 were achieved from the Schottky barrier diode formed in the straightforward fabrication process. The facts are very beneficial for designing future nano-scale FETs.

Lateral encroachment phenomenon has been analyzed when full silicidation of Si nanowire has been performed [1]. Suppression of this phenomenon was accomplished by the nitrogen incorporation in Ni films prior to the silicidation. It has been revealed that the suppression effect for this method has come from thin Si nitride layer formed at Ni/Si interface during the Ni deposition in nitrogen containing atmosphere and its retardation of excessive silicidation.

Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P + layer was formed for the drain electrode. On-and offstate currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.