The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power. In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. An electrical IGBT behavior model using the Simscape Electronics library components is developed and analyzed. This model is parameterized using the constructor datasheet to ensure a good representation of the dynamic and static IGBT behaviors. An extraction and optimization studies of the IGBT model parameters using a stochastic algorithm implemented in Matlab are presented. The proposed method is based on the Genetic Algorithm (GA) to perfectly extract and optimize the model parameters using the mathematical model circuit equations and the provided datasheet characteristics. A simulation in the Matlab/Simulink environment and a comparison with the experimental results for an IGBT device example are carried out to demonstrate the proposed model accuracy.

Modeling the power component is a strong request for power electronic field. Thus, the use of a robust simulator has a great influence on the quality of electronic circuits designing. This paper is focusing on the modeling of an IGBT device using SIMULINK tool. This model based on electric elements of SIMSCAPE library can be parameterized using data from datasheet manufacturers. The simulation waveforms of current and voltage describe the switching mechanism with a good precision. As result, the transfer characteristic is verified and compared to manufacturer's data.

This study introduces a less complex approach for modelling the power PIN diode in MATLAB/SIMULINK software. In this approach, a behaviour modelling methodology is adapted to explore the distributed effect of both the electrical and thermal phenomena within the component. The manufacturer's data are the main source of information. Indeed, all of the modelling parameters are derived from the published data sheets. Moreover, the model validation is obtained by a comparison between the simulation results and the datasheet characteristics given for several tests. The diode model presented in this study is validated from an electro-thermal point of view.

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MA TLAB/SIMULINK is a universal software used in different fields. The 'SIMPOWER', 'SIMSCAPE' and 'SIMULINK' libraries are dedicated to electrical engineering domain. The power electronic devices models of these libraries do not reflect their effective functioning. In this work we are interested in the discrete power electronic device, the power PIN diode, we present the implementation of their behavioral electric model in MATLAB/SIMULINK. The integrated SIMULlNK PIN diode model is based on electric elements of SIMSCAPE library. Simulation results have been achieved and compared to manufacturer data to verify the validity of the model in the switching phase closure.