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Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl 2 ·4H 2 O) and antimony(III) chloride (SbCl 3 ) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO 2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10 −3 Ω cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.

In this study, antimony-doped tin oxide (ATO) thin films were fabricated by the solgel dip coating process on glass substrates. After the deposition process, the films were treated by Argon-plasma (Ar-400 Watt). The effect of argon-plasma treatments on the electrical and optical properties of ATO thin films was then investigated as a function of the plasma treatment time. It was found that Ar-plasma treatment increased the electrical conductivity of ATO films, but it decreased the optical transmission of ATO thin films.

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