Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Abstract

Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl 2 ·4H 2 O) and antimony(III) chloride (SbCl 3 ) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO 2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10 −3 Ω cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.

Synthesis and characterization of SnO2 thin layer with a doping aluminum is deposited on quartz substrates

“…The application of thin layers for semiconductors developed in the form of transparent conductive oxides (TCO), capacitors, diodes, transistors and sensors. Application TCO develop rapidly and has been applied to electronic devices such as LCD TVs, Plasma TVs, organic electroluminescence (EL), for example touch screen monitors on automatic teller machine (ATM), ticket vending machines were installed in train stations, car navigation systems, handheld game consoles, mobile phones, and electrodes in solar cells [10][11][12][13][14]. SnO2 attractive for development because it is transparent to light (the energy gap 3.6 eV) [15], obstacles electricity is low, and has chemical stability is, the price is cheap, is responsive to a number of gas, durable, and requires only a simple electronic device in its application [16].…”

SINTESIS LAPISAN TIPIS (THIN FILM) SnO2 DAN SnO2:Al MENGGUNAKAN TEKNIK SOL-GEL SPIN COATING PADA SUBSTRAT KACA DAN QUARTZ

“…Berdasarkan penelitian yang telah banyak dilakukan, SnO2 biasanya didoping dengan antimony (Sb) atau yang disebut dengan ATO (Antimony Tin Oxide) (Hammad et al, 2011), FTO (Fluorine Tin Oxide) (Gurakar et al, 2013), dan AFTO (Antimony and Fluorine doped Tin Oxide) (Battal et al, 2014 Sintesis material lapisan tipis SnO2 …”

Conductivity and thermoelectric properties of nanostructure tin oxide thin films

“…The n values of the film increase with increasing temperature. The charge carrier mobility is described as follows (Hammad et al, 2011): Fig. 5b shows the charge carrier mobility dependence on temperature for the SnO 2 doped with Fe or Cu film, the mobility increases with an increase of temperature.…”