Conductivity and thermoelectric properties of nanostructure tin oxide thin films

Batal, M.A.; Nashed, Ghassan; Jneed, Fares Haj

doi:10.1016/j.jaubas.2012.09.005

Cited by 8 publications

(5 citation statements)

References 8 publications

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“…If, instead, this level can be attributed to V O , which becomes more dominant once the hydrogen donors are removed, then our calculated value is also in good agreement with this result. We note that a level at 0.28-0.35 eV has been observed in many n-type samples [75,[164][165][166] (as has the ∼0.15 eV level) [73][74][75]167], and that, in a study on SnO 2 nanoparticles [168], a switching of activation energy from 0.11 to 0.35 eV was observed in the largest nanoparticle when changing from low to high temperature.…”

Section: Sn Omentioning

confidence: 52%

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Buckeridge

Catlow

Farrow

et al. 2018

Phys. Rev. Materials

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The source of n-type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In 2 O 3 , SnO 2 , and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In 2 O 3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO 2 , the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n-type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In 2 O 3 , but also in SnO 2 and ZnO.

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Section: Sn Omentioning

confidence: 52%

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Buckeridge

Catlow

Farrow

et al. 2018

Phys. Rev. Materials

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“…Its amplitudes increase with increasing temperature till reaches a transition temperature at T=205K then decrease to the end of the temperature study range as seen in the inset of figure 7. The increase in S(μV/K) with temperature is because of the increase of thermally excited carriers number [35,36].…”

Section: Thermoelectric Powermentioning

confidence: 99%

Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9

Mohamed¹,

Ahmed²,

Ali³

et al. 2022

Phys. Scr.

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Solid state reaction method are used to prepare Sbx(SnO2)1-x (x=0 and 0.1) with sintering temperatures, 600oC and 800oC. The crystallographic properties of undoped and doped SnO2 materials results showed the tetragonal rutile structure of SnO2. The crystallinity was clear and increased with increasing the heat treatment. For the most diffraction peaks the microstrain is negative because do˂ds indicating the generation of residual compressive stress in the surface. Rietveld refinement proved that a good fitting parameters Rp, Rwp, and χ2 makes the derived samples to be in a high quality, especially Sb0.1(SnO2)0.9 sample. Scanning Electron Microscopy (SEM) indicated that a spherical shape of SnO2 with nanoparticles but plates and nanorods shaped of SnO2 were detected for Sb0.1(SnO2)0.9 compound that was sintered at 800°C. SnO2 has grain size 67 nm and 86 nm at sintering temperatures 600°C and 800°C respectively, but after adding Sb the grain size decreases to be ≈44 nm at the same sintering temperatures. The electrical resistivity, ρ, of Sb0.1(SnO2)0.9 behaved as semiconductor-like. The magnetoresistance, MR, results showed that ρ(0.6 tesla) < ρ(0 tesla) at Tsint=600oC where ρ (0.6 tesla) > ρ (0 tesla) at Tsint=800°C because the crystallinity increased with increasing of the sintering temperatures. The results of seebeck showed that charge carriers are n-tape at Tsint=600°C and p-type at Tsint=800°C. The optical energy band, Eg of Sb0.1(SnO2)0.9 which were 2.49 eV and 3.21 eV at Tsint= 600°C and 800°C respectively and the high values of the transmittance make this compound is candidate to work as window layer in solar cell applications. The results of susceptibility denotes that the Sb0.1(SnO2)0.9 compound is a paramagnetic material.

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“…Among them, we can mention layered cobalt oxides, perovskite-structured compounds, transparent conductive oxides (TCOs), among others. Various p-and n-type oxide semiconductors, such as Ca 3 Co 4 O 9 , Na x CoO 2 , LaCoO 3 , SrTiO 3 , CaMnO 3 , ZnO, TiO 2 and SnO 2 have been studied [6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Despite the efforts, a suitable value for ZT has not yet been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…The flat energy levels lying in the band gap have mainly Fe(d) orbital character. The Seebeck coefficient results plotted versus the temperature are depicted in (b); our theoretical (solid line) results and experimental (red diamonds) data extracted from[16].…”

mentioning

confidence: 99%

“…For the temperature interval 150-400K, a p-type conductivity was predicted. M. Batal and collaborators[16] have reported the results of Seebeck coefficient measurements, in the temperature range 150-350K, for Fe-doped SnO 2 thin films structures, which showed a p-type conductivity. Good agreement between our theoretical predictions and their experimental data is observed for temperatures up to ~ 280 K. It is observed a deviation in S starting at ~280K.…”

mentioning

confidence: 99%

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Ab initio study of thermoelectric properties of doped SnO2 superlattices

Borges

Silva

Castro

et al. 2015

Journal of Solid State Chemistry

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Transparent conductive oxides, such as tin dioxide (SnO 2 ), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb-and Zn-uniformly doping and co-doping SnO 2 , as well as of Sb and Zn planar (or delta)-doped layers in SnO 2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO 2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications.

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Conductivity and thermoelectric properties of nanostructure tin oxide thin films

Cited by 8 publications

References 8 publications

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9

Ab initio study of thermoelectric properties of doped SnO2 superlattices

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Conductivity and thermoelectric properties of nanostructure tin oxide thin films

Cited by 8 publications

References 8 publications

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Structural, electrical and optical properties investigation of nano-sized Sb0.1(SnO2)0.9

Ab initio study of thermoelectric properties of doped SnO2 superlattices

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Structural, electrical and optical properties investigation of nano-sized Sb_0.1(SnO₂)_0.9