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Optical emission spectra were measured and the relationship between resistivity of SiN films which were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) and emission intensities from species excited by electron cyclotron resonance was clarified. With increasing microwave power of lowered reacting pressure or SiH4 gas flow rate, the light intensity from excited ions increased in comparison to the intensity from excited radicals. As a result of increasing excited ion density, the SiN film was condensed and the prismatic structure observed in low-resistivity film was not absent from high-resistivity film.

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