We report La 0.7 Sr 0.3 MnO 3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicontechnology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics.Index Terms-Citric acid etch, magnetoelectronic devices, manganite heterojunctions, silicon technology.

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