Recently discovered 2M phase of bulk WS 2 was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS 2 . We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of the Z 2 invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS 2 as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the W d and S p states. By means of Z 2 invariant computations and a calculation of the edge states, we show that bilayer 2M WS 2 exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that Berry curvature dipole signals, which are absent in the centrosymmetric bulk 2M WS 2 , can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.

The anomalous Hall effect in time-reversal symmetry broken systems is underpinned by the concept of Berry curvature in band theory. However, recent experiments reveal that the nonlinear Hall effect can be observed in non-magnetic systems without applying an external magnetic field. The emergence of nonlinear Hall effect under time-reversal symmetric conditions can be explained in terms of non-vanishing Berry curvature dipole arising from inversion symmetry breaking. In this work, we availed realistic tight-binding models, first-principles calculations, and symmetry analyses to explore the combined effect of transverse electric field and strain, which leads to a giant Berry curvature dipole in the elemental buckled honeycomb lattices – silicene, germanene, and stanene. The external electric field breaks the inversion symmetry of these systems, while strain helps to attain an asymmetrical distribution of Berry curvature of a single valley. Furthermore, the topology of the electronic wavefunction switches from the band inverted quantum spin Hall state to normal insulating one at the gapless point. This band gap closing at the critical electric field strength is accompanied by an enhanced Berry curvature and concomitantly a giant Berry curvature dipole at the Fermi level. Our results predict the occurrence of an electrically switchable nonlinear electrical and thermal Hall effect in a new class of elemental systems that can be experimentally verified.

Janus transition metal dichalcogenides, with intrinsic mirror asymmetry, exhibit a wide array of interesting properties. In this work, we study Janus monolayers derived from WTe2 using first-principles and tight-binding calculations. We discover that WSeTe and WSTe are topologically trivial, in contrast to the parent quantum spin Hall insulator WTe2. Motivated by the growing interest in non-linear Hall effect, which also requires asymmetric structures, we investigate the Berry curvature and its dipole in these Janus systems and find that they exhibit strikingly large values of Berry curvature dipole, despite being in the topologically trivial phase. We track down the origin of this behaviour and put forth a low-energy massive Dirac model to understand the central features of our ab inito computations. Our predictions introduce Janus monolayers as promising new platforms for exploring as well as engineering non-linear Hall effect.

Photodetector based on two‐dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power‐dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta2NiS5. While the fabricated photodetector exhibits good sensitivity (3.1 mS W−1per □) and fast photoresponse (31 µs), the bias‐, polarization‐, and spatial‐resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm−2, the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two‐recombination‐center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

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