Cu(In 1-x ,Ga x)Se 2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate differentproperties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF))in order to better understand the role that the Ga content has on film quality.The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower.Also, awider and largerGa/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower

a b s t r a c tThe electrical and optical properties of InZnO for use as a transparent conducting oxide (TCO) is reported through the investigation of the concentration of indium and oxygen in the film. InZnO films (10-30 wt.% In) were deposited by magnetron sputtering without substrate heating or annealing from a ceramic ZnO and a metallic indium target. The film's properties were investigated by X-ray photoelectric spectroscopy (XPS), 4-point probe, UV-vis spectroscopy (UV-vis), spectroscopic ellipsometry, and Hall measurements. InZnO films obtained properties with low resistivity, on the order of $5.5 Â 10 À4 ohm-cm, with a mobility $35 cm 2 /V S, and carrier concentrations $3 ⁄ 10 20 cm À3 . The band-gap ranged from 2.7 to 3.2 eV with transmission of several samples >80%. InZnO has demonstrated properties adequate for photovoltaic applications.

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