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The etching of epitaxially grown perovskite oxide BaSnO3 (BSO) and BaTiO3 (BTO) thin films is studied using Cl-based (BCl3/Ar) and F-based (CF4/Ar) plasma chemistries in an inductively coupled plasma reactive ion etching (ICP-RIE) system for the development of field effect transistors (FETs). It is found that the BCl3/Ar process has a time-independent and a higher etch rate and creates a smooth etched surface, while the etch rate of BSO and BTO in CF4/Ar plasma decreases with the etching time duration. For the BCl3/Ar etching process, the etch rate increases with both ion density and ion energy, suggesting the combination of chemical plasma etching and physical ion sputtering mechanisms. Using the Cl-based etching process, BaSnO3 and BaTiO3 heterojunction FETs are developed. The devices with a gate length of 1.5 μm have a saturation current density of 287.6 mA/mm, a maximum transconductance of gm = 91.3 mS/mm, an FET mobility of 45.3 cm2/V s, and a threshold voltage of −1.75 V. The etching processes developed in this work will enable further development of perovskite oxide heterostructure electronic devices.

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