We investigate second-harmonic generation in III-V semiconductor wire waveguides aligned with a crystallographic axis. In this direction, because of the single nonzero tensor element coming from the zinc-blende symmetry of III-V semiconductors, only frequency conversion by mixing with the longitudinal components of the optical fields is allowed. We experimentally study the impact of the propagation direction on the conversion efficiency and confirm the role played by the longitudinal components through the excitation of an antisymmetric second-harmonic higher-order mode.

The large index contrast and the subwalength tranverse dimensions of nanowires induce strong longitudinal electric field components. We show that these components play an important role for second harmonic generation in III-V wire waveguides. To illustrate this behavior, an efficiency map of nonlinear conversion is determined based on full-vectorial calculations. It reveals that many different waveguide dimensions and directions are suitable for efficient conversion of a fundamental quasi-TE pump mode around the 1550 nm telecommunication wavelength to a higher-order second harmonic mode.

Non-degenerate two-photon absorption (TPA) is investigated in a nanophotonic silicon waveguide in a configuration such that the dispersion of the nonlinear absorption and refraction cannot be neglected. It is shown that a signal wave can strongly be absorbed by cross-TPA by interaction with a low energy pump pulse (1.2 pJ), close to the half-bandgap and experiencing low nonlinear absorption. The experiments are very well reproduced by numerical simulations of two-coupled generalized nonlinear Schrödinger equations (GNLSE), validating the usual approximation made to compute the cross nonlinear coefficients in indirect-gap semiconductors. We show that the nonlinear dynamics can be well described by a single GNLSE despite the wavelength separation between the pump and the signal waves. We also demonstrate that in silicon wire waveguides and contrary to optical fibers, the dispersion of the nonlinear absorption is much larger than the dispersion of the Kerr effect. This could have an impact in the design of all-optical functions based on cross-TPA, as well as on the study of supercontinuum and frequency comb generation in integrated semiconductoron-insulator platforms.