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Direct bandgap Al x In 1−x P alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (Al x Ga 1−x ) 0.5 In 0.5 P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well (QW)-based LED devices on GaAs substrates. Here, we present the design and demonstration of Al x In 1−x P red and amber LEDs incorporating multiple QW structures. Strain balancing the QW layers and manipulating the Al x In 1−x P conduction band energy through control of spontaneous atomic ordering produce structures with higher energetic barriers to electron leakage compared to (Al x Ga 1−x ) 0.5 In 0.5 P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.

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