The paper deals with the behavior of field-effect transistors under the influence of radiation. The structure of tunnel field-effect transistors, the principle of operation, various effects from exposure to ionization radiation from outer space, and the results of experimental studies of resistance are presented. Field-effect transistors based on single-layer materials such as graphene and MoS2 are also considered. The behavior of field-effect transistors based on graphene is simulated. The paper presents current-voltage characteristics before and after irradiation, at positive and negative voltage at the transistor gate, etc., the analysis of which showed that there were significant changes in the electrical characteristics of transistors and the surface morphology of a single-layer material. The appearance of defects is associated with the heating of the material in the center of the particle track. Similarly, the simulation of the behavior of transistors based on nanotubes, when exposed to radiation, single events appear, was carried out.

Noise and signal integrity are important factors influencing the design process of microcircuits made using submicron technology. Currently, there is some difference in what design engineers can design and what can be manufactured with the right level of quality and reliability. Therefore, it is necessary to create a fundamentally new methodology for verifying VLSI projects with deep submicron design standards. In order to calculate the percentage of good chips manufactured, it is required to identify vulnerable effects and phenomena from the point of view of submicron technology. In this paper, the effect of noise on various types of microcircuits is studied and recommendations are given for limiting noise. One of the options for achieving the optimal balance between noise, noise immunity and microcircuit parameters is to add margins when calculating the VLSI parameters. The paper shows that VLSI projects with nanometer topological norms must undergo an additional process of verifying the parameters and functioning in general before issuing information for the production of photomasks. Verification requires the use of an integrated set of software tools that are certified in real production conditions.

No abstract

The paper discusses the issues of ensuring the stability of non-volatile memory under radiation exposure. Experimental studies of the durability of memristors were carried out. The switching mechanism on TaOh memristors is similar, but not identical to the TiO2 memristor. X-ray data showed that the "off" state is most susceptible to radiation damage, therefore, before gamma irradiation, all devices were reset to the "off" state. After the irradiation sequence was completed, an installation/reset cycle was performed. For example, graphs of reading I-V curves showing a slight change in slope are constructed. The setting/reset changes are in the range of observed electrical oscillations in the device between cycles, so it cannot be unambiguously attributed to gamma irradiation. When irradiated in static mode with a LPE of 70 MeV * cm2 /mg, single effects were not observed, but in dynamic mode they were.

No abstract