The article is devoted to the study of radiation effects on non-volatile memory. The basis of non-volatile memory with high speed is the ferroelectric effect. The paper describes the principle of operation of FRAM memory, considers the characteristics of various options for the implementation of FRAM. Particular attention is paid to the description of experimental studies of the resistance of FRAM to the effects of ionization radiation from outer space. PZT-FRAMs from three manufacturers, Krysalis Corporation, National Semiconductor Corporation, and Sandia National Laboratories, were considered. The paper illustrates the dependences of the switching charge under the influence of X-rays, the charge change during irradiation and annealing at low temperatures, plots of Hysteresis loops, etc. The influence of neutrons on PZT FRAM was studied by measuring the total switching charge observed when measuring the Hysteresis loop; residual charge; effect on repeated read/write cycles. The experiment involved three samples with different PZT films 240, 250, and 400 nm thick.

The paper deals with the behavior of field-effect transistors under the influence of radiation. The structure of tunnel field-effect transistors, the principle of operation, various effects from exposure to ionization radiation from outer space, and the results of experimental studies of resistance are presented. Field-effect transistors based on single-layer materials such as graphene and MoS2 are also considered. The behavior of field-effect transistors based on graphene is simulated. The paper presents current-voltage characteristics before and after irradiation, at positive and negative voltage at the transistor gate, etc., the analysis of which showed that there were significant changes in the electrical characteristics of transistors and the surface morphology of a single-layer material. The appearance of defects is associated with the heating of the material in the center of the particle track. Similarly, the simulation of the behavior of transistors based on nanotubes, when exposed to radiation, single events appear, was carried out.

The paper discusses the issues of ensuring the stability of non-volatile memory under radiation exposure. Experimental studies of the durability of memristors were carried out. The switching mechanism on TaOh memristors is similar, but not identical to the TiO2 memristor. X-ray data showed that the "off" state is most susceptible to radiation damage, therefore, before gamma irradiation, all devices were reset to the "off" state. After the irradiation sequence was completed, an installation/reset cycle was performed. For example, graphs of reading I-V curves showing a slight change in slope are constructed. The setting/reset changes are in the range of observed electrical oscillations in the device between cycles, so it cannot be unambiguously attributed to gamma irradiation. When irradiated in static mode with a LPE of 70 MeV * cm2 /mg, single effects were not observed, but in dynamic mode they were.