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The oxidation potential of guanine is lowered by 100 mV on selective hydrogen bonding to a cytosine residue. This has been established by examining the effects of the base pairing of guanine to other nucleosides on the rate constant of the electron transfer from guanine to the excited electron acceptor molecule N,N′‐dibutylnaphthaladiimide (NDI, see scheme). An enhancement of the electron transfer was observed selectively for the G:C pair.

An organosilane monolayer was formed from a precursor vapor (trimethylchlorosilane, TMCS) onto the surface of silicon oxide (SiOx) nanopatterns surrounded by hydrogen-terminated silicon (Si–H). The nanopattern was fabricated with a resolution of 20 nm by scanning probe anodization, that is, localized anodization induced beneath the tip of a scanning probe microscope. The area-selectivity arises from the difference in the chemical reactivity of the vapor between the SiOx and Si–H surfaces. The TMCS-coated SiOx patterns showed a resistivity to chemical etching with an aqueous solution of ammonium fluoride and hydrogen peroxide. Lateral force microscopy with an organosilane-coated probe also indicated the presence of the monolayer on SiOx through a friction force contrast between the monolayer-coated and uncoated regions.

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