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The capability of a single CR sub-circuit to model a wide range of non-quasi-static (NQS) delays in silicon germanium heterojunction bipolar transistors is explored. A comparative study is carried out to show that the suitable use of a single CR sub-circuit following the partitioned-charge-based approach can replace the popularly used CR-LCR combination to model both the input and output NQS effects. Based on this NQS model, a correlated noise model is developed, which requires only three additional nodes for implementation in Verilog-A. Results show excellent agreement with numerically simulated data.

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