The characteristics of EMF (U) generation in the thin-film Pt/YIG structures caused by hybridization of propagating magnetostatic surface waves with exchange modes of YIG film were studied. It was shown that at frequencies f* corresponding to the dipole-exchange resonances (DER) the magnitude of EMF U increases by several times in comparison with the frequencies different from DER (f?f*). The Volt-Watt sensitivity was estimated for the Pt/YIG structures with different geometries of Pt microstrips. Keywords: Spintronics, spin waves, EMF generation, electron drag effect , dipole-exchange resonance.
It is shown that for the n-InSb/YIG/GGG (YIG - yttrium iron garnet, GGG - gallium-gadolinium garnet) structure in the tangent to the substrate plane geometry of magnetization (H <10 kOe) at a temperature T≈300 K the magnetoresistance of about 1% is negative, while for n-InSb/GGG structure, in the same magnetization geometry, the magnetoresistance is positive (an increase in electrical resistance in a magnetic field). The negative magnetoresistance effect in the InSb/YIG/GGG structure is due to the influence of the YIG magnetization on the conduction electrons of InSb (proximity effect) and the magnitude of the effect is determined by the value of YIG magnetization and parameters of InSb films.
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