No abstract

A higher-order TM 02n mode accelerating structure is proposed based on a novel concept of dielectric loaded rf cavities. This accelerating structure consists of ultralow-loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure. Unlike conventional dielectric loaded accelerating structures, most of the rf power is stored in the vacuum space near the beam axis, leading to a significant reduction of the wall loss, much lower than that of conventional normal-conducting linac structures. This allows us to realize an extremely high quality factor and a very high shunt impedance at room temperature. A simulation of a 5 cell prototype design with an existing alumina ceramic indicates an unloaded quality factor of the accelerating mode over 120 000 and a shunt impedance exceeding 650 MΩ=m at room temperature.

A pulsed, slow positron beam, with a diameter of 200 μm, was extracted into air through a thin SiN window of an atmospheric positron probe microanalyzer (PPMA), and used to measure the ortho-positronium lifetimes τ in polyvinyl alcohol and polycaprolactam sub-μm-thick films. By measuring the variation of τ as a function of relative humidity, the effect of water molecules on the hole sizes, deduced from τ, was examined for the films with consideration to the chain mobility. The results demonstrate the usefulness of the atmospheric PPMA to the in-situ characterization of nanoscopic holes in thin films under practical conditions.

A technique for investigating atomic-scale defects and/or nanometer (sub-nanometer)-order pores near the surface of samples mounted in air (without vacuum) by positron annihilation spectroscopy (PAS) has been developed. The method relies on the extraction of slow positron beams from the vacuum chamber to air through a thin SiN membrane vacuum window. Using a positron beam with an injection energy of 2.6 keV and a vacuum window with a thickness of 30 nm, samples mounted in air can be investigated by PAS to a depth of ∼100 nm.

We present the detailed description of a successful design and cold testing of the dielectric assist accelerating (DAA) structure. The DAA structure consists of ultralow-loss dielectric cylinders and disks with irises which are periodically arranged in a metallic enclosure. The advantage of the DAA structure is that it has an extremely high quality factor and a very high shunt impedance at room temperature since the electromagnetic field distribution of accelerating mode can be controlled by dielectric parts so that the wall loss on the metallic surface is greatly reduced. A prototype of the five-cell DAA structure was designed and built at C-band (5.712 GHz), and cold tested. Three types of dielectric cell structure, "regular," "end," and "hybrid" dielectric cells, are fabricated by sintering high-purity magnesia. The prototype was assembled by stacking these cells in the hollow copper cylinder, whose two ends are closed by copper plates. The resonant frequency of the prototype was tuned to the desired frequency by machining only end copper plates. The unloaded quality factor of the accelerating mode was measured at 119,314 and the shunt impedance per unit length of the prototype was estimated from the experimental results of the bead pull measurement as Z sh ¼ 617 MΩ=m, which were within 2 percent of the design values. The field distribution of accelerating mode was also measured by the bead pull method, and its results agreed well with simulation results.