High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor J. Appl. Phys. 85, 7931 (1999); 10.1063/1.370610New properties and applications of electronbeam evaporated silicon in submicron elevated source/drain metal oxidesemiconductor fieldeffect transistors

Experimental characteristics of ultrashallow n+p junctions manufactured by vacuum evaporation of antimony (Sb) and silicon (Si), followed by heat treatments to recrystallize the amorphous silicon, are presented. It is found that the n+p junction is located less than 300 Å inside the crystalline silicon and that all Sb is redistributed within the regrown film. Comparisons with Schottky (Sb-Si) diodes show that with a heat treatment at 900 °C, the diodes convert fully from Schottky type to n+p type. Furthermore, normally off-type junction field-effect transistors have been fabricated using these n+p junctions as gate junctions, and the characteristics are presented together with data concerning threshold voltage variations. Also, the subthreshold characteristics of these junction field-effect transistors are presented. The behavior in the subthreshold region is found to be excellent.

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A polysilicon gate structure for application as gate material in p-channel JFET's is presented. The structure was manufactured using solid-phase epitaxy of an evaporated antimony/amorphous—silicon layer. The fabrication process together with experimental evaluation of both diode and JFET characteristics is given. The structure shows near ideal n+p-junction behaviour and the fabricated JFET's are normally off with good values of subthreshold swing and transconductance.

An ultra-shallow poly-silicon emitter formed by different heat treatments including RTA of an evaporated, antimony doped, poly-silicon structure is presented. The fabrication process together with electrical characterizations, resistivity measurements and SIMS analysis are given. Especially, the impact of RTA treatment on the electrical characteristics of these emitter structures is investigated. Also, the IV and Gummel characteristics of a bipolar transistor with this type of poly-silicon emitter is given.