Investigations of evaporated silicon p-n junctions and their application to junction field-effect transistors

Abstract

High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor J. Appl. Phys. 85, 7931 (1999); 10.1063/1.370610New properties and applications of electronbeam evaporated silicon in submicron elevated source/drain metal oxidesemiconductor fieldeffect transistors

Evaluation of Boron Distributions in Amorphous 49 BF 2 + ‐ Implanted Silicon

“…If the rate of ionization of atomic oxygen at the surface is negligible, then a gas-solid equilibrium may be assumed at the sheath-oxide interface and Eq. [12] is recovered.…”

“…It involves complicated procedures and is primarily used as a calibration method. Electron (e-) irradiation photoluminescence/IR absorption techniques (11)(12)(13) and reactive ion etching followed by photoluminescence measurement (14) were recently reported as having improved sensitivity when compared with the IR method. However, the photoluminescence methods can only be used on single-crystalline silicon samples.…”

“…In the fabrication of complementary devices applying junction field effect transistors, one key issue concerns accurate control of the gate doping distribution. Silicon gates deposited under vacuum and defined using lift-off technology are attractive since the films may subsequently be ion-implanted and annealed for the formation of shallow junctions (12). One purpose of this work is to present accurate values for the first four moments of boron profiles resulting from BF2 + implantations in amorphous evaporated silicon films.…”

“…If the rate of ionization of atomic oxygen at the surface is negligible, then a gas-solid equilibrium may be assumed at the sheath-oxide interface and Eq. [12] is recovered. Manuscript submitted April 5, 1990; revised manuscript received Aug. 27, 1990. are estimated to be accurate within less than 10% and are compared with data from theoretical tables.…”