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The optical characteristics of the GaAs1-хPх output LEDs and LEDs irradiated with electrons with Е = 2 MeV, Ф = 1015 ÷ 1016 cm-2 were studied. The width of the band gap of the GaAs1-хPх (х = 0.45) solid solution was estimated. Its growth is caused by the heating of carriers by the field of the p-n junction. The damage coefficients of the lifetime of minority charge carriers for irradiated GaAsP LEDs have been calculated and the consequences of exposure to radiation on the operational parameter Т1, which determines the thermal stability of the diodes, have been analyzed.

Commercial orange and yellow GaAs 1-х P х LEDs were irradiated by 2 MeV electrons with fluences of 10 14 …2•10 16 сm-2 , and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs 1-х P х diodes reduce the electrical conductivity of the base. The series and parallel resistances of the device increase, compensating the electrical conductivity of the base and reducing the probability of forming the avalanche breakdown channels. Negative differential resistance regions that appear in current-voltage characteristics are the result of the presence of a GaP sublattice in the solid solution. During irradiation, the switching voltage into the low-level state increases due to expansion of junction depleted region. The streamlined currents increase after irradiation is caused by changing in the free path length of charge carriers.

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The homo-transitional original and irradiated by electrons with E = 2 MeV; F = 5.9⋅1014 cm-2 ÷ 8.2⋅1016 cm-2 GaP LEDs were studied. The effect of radiation treatment on their electrical and optical characteristics was studied; the results of isochronous annealing of irradiated samples are given; the consequences of high-temperature annealing of output diodes are analyzed. Peculiarities of the formation of the current-voltage characteristics of red LEDs doped with Zn, O, and green LEDs doped with N under reverse bias, as well as features of the recovery of the reverse current during annealing of both types of LEDs, are revealed.