The effect of (NH4)2Sx treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–voltage–current (P–V–I) characteristics of the electroluminescence at low injection levels, changes in the density of surface states at the laser facets are described.

Using of time-dependent perturbation and deformation potential theories for electronphonon interaction, the rate of change of crystal momentum and energy of electron along the field direction has been estimated in silicon. It is found that the loss rate of crystal momentum of the electron along field direction, due to acoustic phonon collisions is greater than that due to optical phonon collisions, whereas the rate of loss of energy of electrons due to optical phonon interactions is greater than that due to acoustic phonon collisions.The dominant acoustic phonon contribution to the loss rate of the crystal momentum of the electron along field direction is confirmed by the observed and estimated temperature dependence of the drift velocity of electrons in silicon for high electric fields.

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