The practical possibility of a guaranteed return of budget unmanned aerial vehicles (UAV) to area of the starting point in event of loss radio communication with a video camera or control panel is considered. In this regard, an experimental model of a flying wing with wingspan of 1000 mm and a flight weight of up to 500 g was built, on which a flight controller SPRacingF3 based on the STM32F303 microcontroller with a GPS receiver and a directional video camera was installed to provide FTP flights. Based on INAV firmware, main attention was paid to setting flight modes NAV RTH, NAV FAILSAFE to ensure a guaranteed return. The practical possibility of using GPS Rescue mode for Betaflight firmware to return quadrocopter to a point close in take-off coordinates was also considered. In this regard, an experimental prototype was built with a 250mm frame, but with which OMNIBUSF4V3 flight controller was installed based on STM32F405 microcontroller with a GPS receiver and a heading video camera for FTP flights. During flight tests, it was shown that GPS Rescue mode allows you to return UAV to the launch zone, subject to the settings presented in the work on the assembled quadcopter. When performing GPS Rescue mode, an important condition is the stable connection of GPS receiver with the number of satellites not less than those installed when setting up the firmware. It is established that for the return of UAV of the considered types it is not necessary to use a barometer and magnetometer, functions of which can be performed by GPS receiver.

Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10-5-10-6 A/cm 2 , the energy-0,3-1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects) under irradiation with powerful (high current) pulsed electron beams of high energy (E 0 = 0,3-1 MeV, t = 0,1-10 ns, Ω = 1-10 Hz, j = 20-300 A/cm 2). In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.

During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Given its theoretical justification, the new annealing type has been called the "ionization annealing".

The article created a model of the primary converter - a gamma radiation sensor. It is based on the following properties of a semiconductor crystal: maximum quantum efficiency; maximum mobility of charge carriers; minimum density of structural defects; maximum values of resistivity and density. The combination of these properties provides a significant sensitivity of sensor with the minimum size of crystal. The inconsistency of such a combination must be eliminated both in the process of manufacturing a crystal (for example, a high-resistance crystal can be obtained by the simultaneous use of cleaning, components, and compensating doping) and subsequent processing by the methods proposed in this work (thermal field method, ionization annealing). Among the known materials for gamma radiation sensors, single crystals of Cdx-Zn1-xTe solid solutions have the optimal combination of the above properties and possibilities of their preparation. The advent of modern semiconductor sensors for the first time linked nuclear instrumentation and electronics into a single complex - a semiconductor detector. It combines a semiconductor primary converter of ionizing radiation (sensor), a secondary converter of information from the sensor (electronics) and software for processing this information, interconnected in terms of problem being solved and parameters. However, the development of nuclear energy and the spread of nuclear technologies have put forward new requirements for the control and metrology of ionizing radiation. The current level of nuclear instrumentation cannot fully satisfy them. The solution to this problem can be provided by the development of: methods for choosing the optimal type of semiconductor materials and controlling their properties to create uncooled detectors; sensors with higher resolution; electronics with lower noise level; computer methods and information processing programs with lower estimated costs; control systems for nuclear materials and the state of AES protective barriers that meet the requirements of the existing automatic control of radiation safety (ARS). This article is devoted to the solution of such problems, which ensures the relevance of its topic. The main principle of solving the named scientific problem was results of nuclear-physical studies of the interaction of ionizing radiation with semiconductors, the development and experimental verification of physical-mathematical models of technological processes dosimetry and control of nuclear materials.

Operation of solid-state electronics products in the field of ionizing radiation can significantly change their properties, contributing to their premature destruction or loss of technical characteristics necessary for normal operation of the equipment. The changes observed in this case are caused by a number of specific processes discussed above. Distinguish between reversible and irreversible changes. Irreversible (residual) include radiation changes that remain partially or completely after the termination of exposure. The magnitude of radiation changes is determined by the amount of energy absorbed by materials when interacting with radiation, as well as the rate at which this energy is transferred to them. It depends on the type of radiation and its parameters (energy spectrum, flux density, intensity, etc.), as well as on the nuclear-physical characteristics of materials. Criteria for the radiation resistance of photodetectors. The criterion for the parametric reliability of photodetectors is formulated on the basis that the object under consideration degrades its parameters gradually, both with an increase in the duration of exposure and the dose of radiation. The purpose of the photodetectors, the imposed restrictions on the criterion of their performance, as well as the physics of the effect of radiation, allow us to consider photodetectors as an object functioning under noise conditions. This allows statistical analysis methods to be applied. With this approach, we can use a well-studied mathematical apparatus for testing statistical hypotheses. Three criteria of radiation resistance of photodetectors are proposed. The first is the signal-to-noise ratio in the interpretation of sufficient statistics, the second is the criterion for the average detection error (Kotelnikov's criterion), and the third is the Bayesian risk criterion. This article examines the physical processes and the development of methods for radiation modification of the parameters of semiconductor optoelectronic devices.