Undesired mask-induced effects caused by thick absorber layers in EUV photomasks reduce the quality of the projected patterns at the wafer stage in EUV photolithography scanners. New materials with better absorption properties than the state-of-the-art absorbers, TaN and TaBN, are required to mitigate these effects. In this work, we investigated the optical properties (δ and k) of Te and TeO films in the 13-14 nm range, and the absorption properties of these two materials at 13.5 nm. δ and k are obtained through fitting experimental values of reflectivity versus angle of incidence in the EUV range. We follow a methodology which combines different characterization techniques (X-ray reflectivity, EUV reflectivity, and X-ray photoemission spectroscopy) to reduce the number of free parameters in models and hence, increase the reliability of the optical constants obtained. At 13.5 nm, we obtain δ=0.03120, k = 0.07338 for Te, and δ=0.04099, k = 0.06555 for TeO. To experimentally verify the absorption properties of these materials, different thicknesses of Te and TeO films are cast on top of a state-of-the-art mask-quality EUV multilayer with 66.7% reflectivity at 13.5 nm. We found that a reflectivity of ∼0.7% can be attained with either 32.4 nm of Te, or 34.7 nm of TeO, greatly surpassing the absorption properties of TaN and TaBN. The morphology and surface roughness of the Te and TeO films deposited on the multilayer are also investigated.

Transmissive dielectric wire grid polarizers tuned to 4.43 eV (Mg II line, 280 nm), an important diagnostic line for solar physics, are presented in this communication. The polarizers are based on TiO 2 gratings and designed with a period of ∼140 nm (7143 lines/mm), 40 nm line width (duty cycle of 0.286), and 100 nm line height. Several gratings are fabricated through electron beam lithography combined with reactive ion etching, whereby two parameters in the nanofabrication process are explored: e-beam dosage on the photoresist and TiO 2 etching time. Polarization of samples is optically characterized using a spectroscopic ellipsometer in transmission mode, achieving the best result with an extinction ratio of ∼109 and a transmittance of 16.4% at the target energy of 4.43 eV. The shape of the gratings is characterized through atomic force microscopy (AFM) and scanning electron microscopy (SEM); the measured AFM profiles are distorted by the tip geometry, hence a simple deconvolution procedure is implemented to retrieve the real profile. By analysing the AFM and SEM profiles, we find that the real shapes of the different gratings are close to the design, but with a larger duty cycle than the intended value. With the real grating geometry, an improved model of the best sample was built with a finite-difference time-domain (FDTD) method that matches the result obtained through optical characterization.