4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In photodiode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm 2 illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm 2 under the illumination level of 100 mW/cm 2 . These all findings suggest that Au/BOD-Pyr/n-Si/In device can be used as photodiode in optoelectronic applications.

4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY)-based BOD-Pyr compound was synthesized according to the literature and  HOMO and LUMO energies of the BOD-Pyr were calculated by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09W. Au/BOD-Pyr/n-Si/In Schottky diode were fabricated using thermal evaporation and spin coating technique. The electronic and photovoltaic properties of Au/BOD-Pyr/n-Si/In photodiode have been investigated by current-voltage (I-V) measurements at dark and under various illumination intensities. The calculated ideality factor and barrier height of the diode in dark were found to be 2.84 and 0.75 eV, respectively. These parameters were also obtained under 100 mW/cm2 illumination level as 1.55 and 0.87 eV, respectively. The values of open-circuit voltage and short circuit current density were obtained as 0.26 V and 0.56 mA/cm2 under the illumination level of 100 mW/cm2. These all findings suggest that Au/BOD-Pyr/n-Si/In device can be used as photodiode in optoelectronic applications.