Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode

Ongun, Onur; Taşcı, Enis; Emrullahoğlu, Mustafa; Akın, Ümmühan; Tuğluoğlu, Nihat; Eymür, Serkan

doi:10.1007/s10854-021-06122-y

Cited by 15 publications

(10 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…• m ≈ 2 → IV. Region (I ∝ V ∼2 ): Trap-free SCLC conduction (all traps are filled), Childs Law (I ∝ V 2 ), and this region is also called as super ohmic or super linear conduction, and SCLC is assisted here by a single trap distribution at a single energy level lying below the valance band edge [71,80] (lying above the valance band edge in the case of using a p-Si wafer).…”

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Karaduman,

canbay,

Dere

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

In this work, a novel smart (shape memory) alloy metalized photonic silicon wafer photodiode with Schottky type CuAlV/n-Si/Al contact structure as a nano-electro-mechanical-system (NEMS) photodevice was fabricated by thermal evaporation technique. The CuAlV memory alloy used as the top Schottky metal contact electrode was produced by arc melting technique and a subsequent quenching in an iced-brine water medium, and its shape memory effect characteristics were revealed by thermal and structural tests. The fabricated photonic NEMS photodiode was characterized by different photo-electrical (I-V, I-t) and frequency/time dependent and illuminated capacitance (C-V/f, C-t, C-V/ill.) and conductance-voltage (G-V) measurements under different frequencies and artificial light intensity power conditions. The I-V tests showed an excellent current rectifying ability and very well net photocurrent generation features of the photodiode. The specific detectivity of the photodiode was found as high as almost approaching 1011 Jones. The SCLC (space charge limited current conduction) analyses made on the double-log I-V plots of the photodiode revealed that the trap-filling TFL-SCLC and trap-free SCLC current conduction mechanisms are the two prevailing conduction mechanisms in the forward bias voltage region. The density of interface states (Dit) of the fabricated photodiode was determined. Moreover, an excellent reproducibility of light-induced photocapacitance formation of the novel photodiode was demonstrated by C-V/t measurements under different artificial light power intensities.

show abstract

Section: Characteristics Of Cualv/n-si/al Nems Photodiodementioning

confidence: 99%

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Karaduman,

canbay,

Dere

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Many attempts can be found in the literature to improve SBDs' electrical properties in different electrical applications by using organic semiconductors. As an example, Ongun et al [9] produced an Au/BOD-Pyr/n-Si/In rectification device and showed that the organic matter of BOD-Pyr has suitable semiconductor features for optoelectronic applications. In another study, Tan et al [10] conducted a comparative investigation on the effects of organic Metal Polymer Semiconductor (MPS) and inorganic Metal Insulator Semiconductor (MIS) interlayers in Au/n-GaAs Schottky diodes and they observed that MIS structure exhibits better performance although MPS exhibits rectifying properties.…”

Section: Introductionmentioning

confidence: 99%

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

et al. 2021

View full text Add to dashboard Cite

In this study, the performance of an organic dye obtained from the bark of the red pine (Pinus brutia) tree growing in Muğla/Turkey as an interface layer in the Au/n-Si Schottky diode (SD) structure was evaluated. For this purpose, at first, the optimized molecular structure, the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) simulations of the organic dye were calculated by the Gauss program and it was theoretically proven that the dye exhibits semiconducting properties. Then, the electrical and photodiode variables such as ideality factor, effective barrier height, series resistance, interface states density distribution, photosensitivity, and photo responsivity were evaluated employing current-voltage measurements under dark and different illumination densities. Additionally, C-V measurements were used to demonstrate that the fabricated device has capacitive features and this capability varies as a function of the frequency. Under these measurements, the possible conduction mechanism for the organic dye-based Au/n-Si device was investigated and the results showed that Au/Pinus brutia/n-Si may be a good candidate for optoelectronic applications.

show abstract

“…As a result, the properties of organic materials, which are easy and low-cost production steps, can be used in electronic and optoelectronic fields, making it possible to produce heterojunction layer photosensitive devices. 8,[12][13][14][15][16][17] These organic layered heterojunction structures can be used instead of many inorganic-based materials in various optoelectronic applications such as photodiodes and solar cells. [18][19][20][21] Triphenylamine (TPA) derivatives as a hole transfer materials have become an exciting area in the last decades for their use in the fabrication of electroluminescent devices in different areas.…”

mentioning

confidence: 99%

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Çavdar

Izmirli

Koralay

et al. 2023

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Organic semiconductors provide many advantages in diode fabrication due to their variable electrical properties, flexibility and easy and cheap production processes. In this study, triphenylamine (TPA) organic compound was used for the Al/p-Si/TPA/Al Schottky structure. The effect of the triphenylamine on the electrical properties of the produced diode was studied by current-voltage measurements in dark and under various illumination intensities. The main electrical parameters such as barrier height (ΦB), ideality factor (n), series resistance (R s), and interface state density (N ss) were obtained from the I-V characteristics. The n, Φ B and R s values of the diode were found as 1.88, 0.80 eV and 2195 Ω for dark, and 3.96, 0.71 eV and 17 Ω for 100 mW cm−2 illumination intensity. Besides, the fabricated device exhibited photodiode behavior as obtained from the photocurrent measurement for the diode, depending on the illumination intensity. Additionally, it was found that the Al/p-Si/TPA/Al diode had a higher photocurrent (I ph ) in illuminated conditions than in dark conditions. The main photovoltaic parameters such as open circuit voltage (V oc ) and short circuit current (I sc ) were also investigated. Photo-responsivity and response time (τ r, τ d) of the diode was obtained as 0,015 A W−1 and 800 ms respectively. All these results show that the Al/p-Si/TPA/Al diode has potential in optoelectronic device applications.

show abstract

Fabrication, illumination dependent electrical and photovoltaic properties of Au/BOD-Pyr/n-Si/In schottky diode

Cited by 15 publications

References 44 publications

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Contact Info

Product

Resources

About