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This paper describes a millimeter-wave broadband monolithic even harmonic image rejection mixer with a ring connected anti-parallel diode pair. This mixer employs an even harmonic mixer with a ring connected anti-parallel diode pair to reduce the LO leakage. Also it employs the balanced type mixer with the Marchand balun to broaden the frequency range. Furthermore, the configuration of the image rejection mixer can suppress the image components.The chip size of the developed millimeterwave broadband monolithic mixer is 1.2 mm x 2.9 mm on a GaAs substrate. Conversion loss is less than 15.9 dB and image rejection ratio is more than 12.5 dB from 24 to 44 GHz. Broadband characteristics can be achieved by the proposed configuration.

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The transfer characteristic of relative phase of the third-order intermodulation distortion (IM 3 ) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IM 3 is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM 3 versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IM3 relative phase is caused by the generation of IM3 due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.