Abstract-This paper describes the wafer level integration of a differential 24 GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30 µm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna driven by the oscillator is calculated based on measurements and the result is discussed.

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An efhcicnt and robnst parameter exttaciim method for thc bipolar conipacl MEXTRAM modcl has been dcvelopcd niid applied IO SiGc/Si heterosvucture bipolar transistors.Tlic purposc is to w m c t as many transistor parameters as possihlc by an appropriatcly chosen set of 1SC ancl AC measureincnts without fitting ihe parameters to the transistor moilcl. These parameters give B useful insight into thc physical bchavior of the iransistor, which lcnds itself to derivc a scaiablc transistor inodei ;mrl to makc a propcr circuit dcsign. Thc CXtFaCtCd rriorlcl is validatcd in the dcsign and characterization of an active rcccivc inixcr for I 1 GBz. ~N'TR013UC~I'IONThc nccessity to expund the frequency range us~blc for consunicr serviccs arises as wirclcss techniques for distrib u h of multitnedia contciit to fixed and mobilc users are getting popular. The Silicoti bipolar transistor has long beeti uscd in Si-MMICs hclow 3 GIIz. The lower GHz range is increasingly heing addrcsscd by CMOS which offers the lowcsi cost [ 11, diie {{I its prevalence in digital clcctronics. An increase in dcvice spccd is strongly corrclnted with a rcductiau in lateral scaling rules. In SiGe HRTs with a large Ge inolc frwtion iti thc base laycr, the nccd for advanccd microwavc pcrforinniicc is met with relaxed Iaterd scnling[2], Ieading to an additional cost sgving potential.As thc circuit operating Frcqucncy approaches the devicc curoCf freqocncy, tuning with reactive clcments becotnes tnorc importan [ [3]. A highcr cmphasis is put on modelling of ou-chip MIM capacitors. spiral incliictors, transmission lincs, and DC as wcll as AC bchavior of !he transistor at higher frcquencics. Cotnparcd with lraditional MMIC dcsign using prcdomintmtly transinission linc eleiiicnts and a low transistor count, typical SiGc MMICs have a much higher density crl' activc dcvices, with the benefit of rcrluccd chip area, but putting R much higher strain on accurate transistor modelling. For the transistor modclling the compact transistor niodcl MEXTRAM has been chosen 141, hccaiise it approximates the quasi-snturation regime of the SiGe HBT mare closely (alhcil not pcrfecdy) than the commonly-uscd Gutnnicl-Poon model. The formulation of this modcl indudcs n rlircct coupling betwccn the bC atid AC betiavior of thc transistor, leading to a physical rcpresentation of the devicc, whcn the correct MEXTRAM parameter sct is fuuund [51. The physical rcpresenration gives a scalable parameter sct and an improved feedback bctwcen technological and circuit dcsign. This paper will dcal witti scalable MEXTRAM modcl parametcr cxtractioii with a rocus on cxlracling as many parainctcrs as possiblc, without lilting the paramcters lo the model. The application of thc inforina~ion gained on the Figure 1 : MriX'TRAM modcl(.5] transistor is dcmonstratcd by the means of a SiGc HBT MMIC active receivc mixer for I I GHz 161. The treatment of the accurate modcls for the MIM capacitors, spiral inductors and transmission lines is bcyond the scopc of this paper. 11. TKANSISTOK PARAMETER EX'I'KACT...

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