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An experimental study is conducted into the effect of ultrasonic treatment on the surface-state distribution function of a gamma-irradiated Si/SiO 2 interface. It is established that ultrasonic treatment reduces the density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasoundinduced transition of defects to an electrically inactive state. SOLID-STATE DEVICES AND CIRCUITS-32 -28 -24 -20 -16 -12 -8 -4 4 8 0.95 0.90 0.85 C / C 0 1 2 3 4 V , V Fig. 1.High-frequency C-V characteristics. Curves 1 -3 are obtained by measurement before irradiation, between irradiation and ultrasonic treatment, and after ultrasonic treatment, respectively. Curve 4 is a calculated one.

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